Semiconductor devices Generally, these semiconductor materials are silicon, germanium or gallium arsenide, which can be used as rectifiers, oscillators, light emitters, amplifiers, photodetectors and other devices. In order to distinguish it from integrated circuits, it is sometimes called discrete devices. The basic structure of most double-ended devices (i.e. crystal diodes) is PN junction. Using different semiconductor materials, different processes and geometric structures, a variety of crystal diodes with different functions have been developed, which can be used to generate, control, receive, transform, amplify signals and convert energy. The frequency coverage of crystal diode can range from low frequency, high frequency, microwave, millimeter wave, infrared to light wave. Three-terminal devices are generally active devices, and typical representatives are various transistors (also called transistors). Transistors can be divided into bipolar transistors and field effect transistors. According to different uses, transistors can be divided into power transistors, microwave transistors and low noise transistors. Besides general transistors used for amplification, oscillation and switching, there are also some special transistors, such as phototransistors, magnetic sensitive transistor, field effect sensors, etc. These devices can not only convert the information of some environmental factors into electrical signals, but also have the amplification effect of general transistors to obtain larger output signals. In addition, there are some special devices, such as single junction transistor can be used to generate sawtooth wave, silicon controlled rectifier can be used in various high current control circuits, and charge coupled device can be used as glue injection device or information storage device. In military equipment such as communication and radar, weak signals are mainly received by semiconductor receiving devices with high sensitivity and low noise. With the rapid development of microwave communication technology, microwave semiconductor low-noise devices have developed rapidly, the working frequency has been continuously improved, and the noise figure has been continuously reduced. Microwave semiconductor devices have been widely used in air defense and missile defense, electronic warfare, C(U3)I and other systems because of their excellent performance, small size, light weight and low power consumption.
Chapter 1 Common components
The resistance value of 1. 1 is represented by "r" plus a number in the circuit, for example, R 1 represents the resistance with the number 1. The main functions of resistors in the circuit are: shunt, current limiting, voltage division, bias and so on.
The capacitance of 1.2 capacitor is generally represented by "c" plus a number in the circuit (for example, C 13 is represented by the number 13). Capacitor is an element composed of two metal films, which are adjacent to each other and separated by insulating materials. The characteristics of capacitors are mainly AC to DC.
Capacitance refers to the amount of electric energy that can be stored. Capacitance is called capacitive reactance, which is related to the frequency and capacitance of AC signal.
The inductance of 1.3 is not widely used in electronic manufacturing, but it is equally important in circuits. We think that inductance, like capacitance, is also an energy storage element, which can convert electric energy into magnetic field energy and store it in the magnetic field. Symbol l of inductor
It means that its basic unit is Henry (H), which is often used as the unit of milliHenry (mH). It often forms LC filters, LC oscillators, etc. together with capacitors. In addition, people also use the characteristics of inductance to make chokes, transformers, relays and so on.
1.4 transformer
1.5 relay
1.6 power supply, switch and protection elements
1.7 discrete semiconductor device
1.8 analog integrated circuit
1.9 digital integrated circuit
1. 10 display device
Chapter II Characters, Figures and Symbols of Electronic Circuits
2. 1 Text symbols in electrical technology
2.2 Graphic symbols in the circuit
Chapter III Design Methods of Electronic Circuits
3. 1 design method and steps of electronic circuit
3.2 Electronic Circuit Design Method
3.3 Design Report
The second article electronic circuit design
Chapter IV Basic Analog Electronic Circuit Design
4. 1 basic amplifier design
4.2 Filter design
4.3 Design of integrated regulated power supply
Chapter V Functional Circuit Design
5. Design of1function operation circuit
5.2 Design of signal generating circuit
5.3 Power amplifier design
5.4 signal conversion circuit design
5.5 Design of High Precision Amplifier
5.6 High-speed operational amplifier
5.7 High Input Impedance Operational Amplifier
5.8 Programmable Gain Amplifier
5.9 isolation amplifier
Chapter VI Digital Circuit Design
6. Design of1decoder
6.2 adder design
6.3 sequential logic circuit design
6.4 Interface Circuit Design between TTL and CMOS
The third anti-interference design
Chapter VII Anti-temperature Interference Design
7. 1 Influence of temperature interference on electronic circuits
7.2 Anti-temperature interference measures and ideas
7.3 Common methods to resist temperature interference
Chapter VIII Anti-electromagnetic Interference Design
8. 1 Overview
8.2 Anti-electromagnetic interference design
Chapter IV Measurement of Circuit Parameters
Chapter IX Basic Knowledge of Measurement
9. 1 measurement method
9.2 Selection of measuring instruments
9.3 Data processing of measurement
Chapter 10 Parameter Measurement of Circuit Components
10. 1 Measure the resistor and potentiometer parameters.
Measurement of 10.2 capacitor
Measurement of 10.3 inductance
10.4 measurement of transformer
Measurement of 10.5 diode
Measurement of 10.6 transistor
Measurement of 10.7 field effect transistor
Measurement of 10.8 integrated circuit
10.9 measurement of relay
10. 10 measurement of display device
Chapter 1 1 Measurement of Common Electrical Signals
Measure 1 1. 1 voltage.
1 1.2 current measurement
1 1.3 time measurement
1 1.4 frequency measurement
1 1.5 phase measurement
Chapter 12 Measurement of Circuit Performance Parameters
12. 1 characteristic measurement of amplifier
12.2 circuit frequency characteristic measurement
Measurement of input and output impedance of 12.3 circuit
Chapter V Automation of Electronic Circuit Design
Chapter XIII Schematic Design of Protel 99ES
13.1protel99s overview
13.2 Protel 99ES schematic design basis
13.3 circuit schematic diagram design and drawing
13.4 generate report
Fabrication of 13.5 circuit schematic components
Chapter 14 PCB design
14.1design basis of PCB printed circuit board
14.2 manufacturing printed circuit boards
14.3 PCB component manufacturing
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